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NTB5405N, NVB5405N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
40
39
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 40 V
T J = 25 ° C
T J = 100 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 30 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
? 7.0
3.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 40 A
4.9
5.8
m W
V GS = 5.0 V, I D = 15 A
7.0
8.0
Forward Transconductance
g FS
V GS = 10 V, I D = 15 A
32
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
2700
4000
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = 32 V
V GS = 10 V, V DS = 32 V,
I D = 40 A
700
300
88
3.25
9.5
37
1400
600
nC
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn ? On Delay Time
t d(ON)
8.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DD = 32 V,
I D = 40 A, R G = 2.5 W
52
55
70
SWITCHING CHARACTERISTICS, V GS = 5 V (Note 3)
Turn ? On Delay Time
t d(ON)
19
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 5 V, V DD = 20 V,
I D = 20 A, R G = 2.5 W
153
32
42
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 20 A
T J = 25 ° C
T J = 100 ° C
0.82
TBD
1.1
V
Reverse Recovery Time
t RR
66
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dI SD /dt = 100 A/ m s,
I S = 20 A
35
31
Reverse Recovery Charge
Q RR
113
nC
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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